Distributed amplifier
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'''Distributed amplifiers''' are a very resourceful example of distributed [[circuit design]] that incorporate [[transmission line]] theory into [[electronic amplifier|traditional amplifier design]] in order to arrive at an amplifier with a larger [[gain-bandwidth product]] than is realizable by conventional [[Electronic circuit|circuits]].
[[Image:N stage TWA.png|right|thumb|500px|N-stage traveling-wave amplifier]]
==History==
The design of the distributed amplifiers was first formulated by [[William S. Percival]] in 1936.<ref>W. S. Percival, “Thermionic Valve Circuits,” British Patent Specification no. 460,562, filed 24 July 1936, granted January 1937.</ref> In that year Percival proposed a design by which the [[transconductance]]s of individual [[vacuum tube]]s could be added linearly, thus arriving at a circuit that achieved a gain-bandwidth product greater than that of an individual tube. Percival's design did not gain widespread awareness however, until a publication on the subject was authored by Ginzton, Hewlett, Jasberg, and Noe in 1948.<ref>E. L. Ginzton, W. R. Hewlett, J. H. Jasberg, and J. D. Noe, “Distributed Amplification,” Proc. IRE, pp. 956-69, August 1948.</ref> It is to this later paper that the term ''distributed amplifier'' can actually be traced. Traditionally, DA design architectures were realized using [[valve]] technology.
== Current technology ==
More recently, III-V [[semiconductor]] technologies, such as GaAs<ref>E. W. Strid and K. R. Gleason, “A DC-12 GHz Monolithic [[GaAsFET]] Distributed Amplifier,” IEEE Trans. Microwave Theory and Techniques, vol. MTT-30, no. 7, pp. 969-975, July 1982.</ref><ref>Y. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, and R. A. Pucel, “A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier,” IEEE Trans. Microwave Theory and Techniques, vol. MTT-30, no. 7, pp. 976-981, July 1982.</ref><ref>K. B. Niclas, W. T. Wilser, T. R. Kritzer, and R. R. Pereira, “On Theory and Performance of Solid-State Microwave Distributed Amplifiers,” IEEE Trans. Microwave Theory and Techniques, vol. MTT-31, no. 6, pp. 447-456, June 1983.
</ref> and InP have been used.<ref>R. Majidi-Ahy, C. K. Nishimoto, M. Riaziat, M. Glenn, S. Silverman, S.-L. Weng, Y.-C. Pao, G. A. Zdasiuk, S. G. Bandy, and Z. C. H. Tan, “5-100 GHz InP Coplanar Waveguide MMIC Distributed Amplifier,” IEEE Trans. Microwave Theory and Techniques, vol. MTT-38, no. 12, December 1990.</ref><ref>S. Kimura, Y. Imai, Y. Umeda, and T. Enoki, “Loss-compensated Distributed Baseband Amplifier for Optical Transmission Systems,” IEEE Trans. Microwave Theory and Techniques, vol. MTT-44, no. 10, pp. 1688-1693, October 1996.</ref> These have superior performance resulting from higher [[bandgap]]s (higher electron mobility), higher saturated [[electron]] velocity, higher breakdown voltages and higher-[[resistivity]] substrates. The latter contributes much to the availability of higher quality-factor ([[Q-factor]] or simply Q) integrated [[Passivity (engineering)|passive]] devices in the III-V semiconductor technologies.
To meet the marketplace demands on cost, size, and power consumption of monolithic [[microwave]] [[integrated circuits]] (MMICs), research continues in the development of mainstream [[digital]] bulk-CMOS processes for such purposes. The continuous scaling of feature sizes in current IC technologies has enabled microwave and mm-wave CMOS circuits to directly benefit from the resulting increased unity-gain frequencies of the scaled technology. This device scaling, along with the advanced process control available in today's technologies, has recently made it possible to reach an fT of 170 [[GHz]] and a maximum [[oscillation]] [[frequency]] (fmax) of 240 GHz in a 90nm CMOS process.<ref>D. Linten, S. Thijs, W. Jeamsaksiri, J. Ramos, A. Mercha, M. I. Natarajan, P. Wambacq, A. J. Scholten, and S. Decoutere, “An Integrated 5 GHz Low-Noise Amplifier with 5.5 kV HBM ESD protection in 90 nm RF CMOS,” 2005 Symp. on VLSI Circuits Digest of Technical Papers, pp. 86-89, July 16-18 2005.</ref>
==Theory of operation==
The operation of the DA can perhaps be most easily understood when explained in terms of the [[traveling-wave tube]] amplifier (TWTA). The DA consists of a pair of [[transmission line]]s with [[characteristic impedance]]s of Z<sub>0</sub> independently connecting the [[input]]s and [[output]]s of several [[active device]]s. An RF signal is thus supplied to the section of transmission line connected to the input of the first device. As the input signal [[Wave propagation|propagates]] down the input line, the individual devices respond to the forward traveling input step by inducing an amplified complementary forward traveling wave on the output line. This assumes the delays of the input and output lines are made equal through selection of [[Wave propagation|propagation]] constants and lengths of the two lines and as such the output signals from each individual device sum in [[phase (waves)|phase]]. [[Terminating resistor]]s Z<sub>g</sub> and Z<sub>d</sub> are placed to minimize destructive [[reflection]]s.
The transconductive [[gain]] of each device is g<sub>m</sub> and the output [[Electrical impedance|impedance]] seen by each [[transistor]] is half the characteristic impedance of the transmission line. So that the overall voltage gain of the DA is:
<math>Av = n*g_m*\frac{Z_0}{2}</math>,
where ''n'' is the number of stages.
Neglecting losses, the gain demonstrates a linear dependence on the number of devices (stages). Unlike the multiplicative nature of a cascade of conventional [[amplifier]]s, the DA demonstrates an additive quality. It is this [[synergistic]] property of the DA architecture that makes it possible for it to provide gain at frequencies beyond that of the unity-gain [[frequency]] of the individual stages. In practice, the number of stages is limited by the diminishing input signal resulting from attenuation on the input line. Means of determining the optimal number of stages are discussed below. [[Bandwidth (signal processing)|Bandwidth]] is typically limited by [[Electrical impedance|impedance]] [[mismatch]]es brought about by frequency dependent device [[parasitic]]s.
The DA architecture introduces [[Propagation delay|delay]] in order to achieve its [[broadband]] gain characteristics. This delay is a desired feature in the design of another distributive system called the [[distributed oscillator]].
== Lumped elements ==
[[Analog delay line|Delay lines]] are made of lumped elements of L and C. The parasitic L and the C from the transistors are used for this and usually C is much higher than the L, so some L is added. Due to the [[Miller effect]] in the common source amplifier the input and the output transmission line are coupled. For example for voltage inverting and current amplifying the input and the output form a shielded [[balanced line]]. Due to the current increasing in the output transmission line with every subsequent transistor, less and less L is added to keep the voltage constant and more and more extra C is added to keep the velocity constant. This C can come from parastics of a second stage. These delay lines do not have a flat dispersion near their cut off, so it is important to use the same L-C periodicity in the input and the output. If inserting transmission lines, input and output will dispers away from each other.
For a distributed amplifier the input is feed in series into the amplifiers and parallel out of them. To avoid losses in the input, no input signal is allowed to leak through. This avoided by using a balanced input and output also known as [[push-pull amplifier]]. Then all signals which leak through the parasitic capacities cancel. The output is combined in a delay line with decreasing impedance. For narrow band operation other methods of phase-matching are possible, which avoid feeding the signal through multiple coils and capacitors. This may be useful for power-amplifiers.
The single amplifiers can be of any class. There maybe some synergy between distributed class E/F amplifiers and some phase-matching methods. Only the fundamental frequency is used in the end, so this is the only frequency, which travels through the delay line version.
Due to this Miller effect a common source transistor acts as a capacitor (non inverting) at high frequencies and has an inverting transconductance at low frequencies. The channel of the transistor has three dimensions. One dimension, the width, is chosen depending on the current needed. The trouble is for a single transistor parasitic capacitance and gain both scale linearly with the width. For the distributed amplifier the capacity - that is the width - of the single transistor is chosen based on the highest frequency and the width needed for the current is split across all transistors.
== Applications ==
Note that those termination resistors are usually not used in CMOS, but the losses due to these are small in typical applications. In solid state power amplifiers often multiple discrete transistors are used for power reasons anyway. If all transistors are driven in a synchronized fashion a very high gate drive power is needed. For frequencies at which small and efficient coils are available distributed amplifiers are more efficient.
Voltage can be amplified by a common gate transistor, which shows no miller effect and no unit gain frequency cut off. Adding this yields the [[cascode]] configuration. The common gate configuration is incompatible with CMOS, it adds a resistor, that means loss, and is more suited for broadband than for high efficiency applications.
* [[radio]]
* [[Acousto-optic modulator]]
* [[time to digital converter]]
== See also ==
* [[Gunn diode]] is a device without any parasitic C or L very suitable for broadband applications
* [[Regenerative circuit]] is circuit using the parasitics of a single transistor for a high frequency narrow band amplifier
* [[Armstrong oscillator]] is circuit using the parasitics of a single transistor for a high frequency narrow band oscillator
==References==
<references/>
==External links==
* [http://www.microwaves101.com/encyclopedia/distributedamp.cfm Microwaves101.com - Distributed amplifiers]
[[Category:Electronic amplifiers]]