Dopant
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A '''dopant''', also called '''doping agent''' and '''dope''', is an impurity element added to a crystal or semiconductor lattice in low concentrations in order to alter the optical/electrical properties of the semiconductor.
Also, doping with [[Ytterbium|Yb]], [[Erbium|Er]], [[Neodymium|Nd]], [[Thulium|Tm]], [[Chromium|Cr]] of optical crystals, ceramics and glasses
is used to make the [[solid-state laser]]s; the elements mentioned are the most common dopants.
In many optically-transparent ghosts, such active centers
may keep their excitation for a time on the order of milliseconds, and relax with [[stimulated emission]],
providing the laser action. The amount of dopant is usually measured in [[atomic percent]]; usually
the relative atomic percent is assumed, taking into account that the dopant ion can substitute the only
part of site in a crystalline lattice. The doping can be also used to change the [[refraction index]]
in [[optical fibers]], especially in the [[double-clad fiber]]s. The optical dopants are characterized
with [[lifetime]] of excitation and the effective absorption and emission cross-sections, which are
main parameters of an active dopant. Usually the concentration of optical dopant is of
order of few percent or even lower. At large density of excitation, the cooperative quenching
(cross-relaxation) reduces the efficiency of the laser action.
The process of introducing dopants into a semiconductor is called [[doping (semiconductor)|doping]].
The addition of a dopant to a [[semiconductor]] has the effect of shifting the [[Fermi level]] within the material. This results in a material with predominantly negative ([[N-type semiconductor|n type]]) or positive ([[P-type semiconductor|p type]]) [[charge carrier]]s depending on the dopant species. Pure semiconductors altered by the presence of dopants are known as [[extrinsic semiconductor]]s (''cf.'' [[intrinsic semiconductor]]). Dopants are introduced into semiconductors in a variety of techniques: solid sources, gases, spin on liquid and ion implanting. See [[ion implantation]], surface [[diffusion]], and solid sources footnote.
== Examples ==
*[[Boron]], [[arsenic]], [[phosphorus]], [[antimony]], among other substances, are commonly used dopants in the semiconductor industry.
**Dopants for [[silicon]] and [[germanium]], [[group 4 element|group IV]] semiconductors:
***Donors: [[group 5 element|group V]] atoms: [[antimony]], [[phosphorus]], [[arsenic]]
***Acceptors: [[group 3 element|group III]] atoms: [[boron]], [[aluminium]], [[gallium]]
**Dopants for [[gallium arsenide]], a group III-V semiconductor:
***Donors: [[group 6 element|group VI]] and [[group 4 element|group IV]] atoms: [[sulfur]], [[selenium]], [[tellurium]],m [[silicon]]
***Acceptors: [[group 2 element|group II]] and [[group 4 element|group IV]] atoms: [[magnesium]], [[zinc]], [[cadmium]], [[silicon]]
*The medical field has some use for [[erbium]] in as a dopant for lasers used in surgery. [[Europium]] is used to dope plastics in lasers. [[Holmium]] is used as to dope [[Yttrium]]-[[Aluminium]] Garnets used in laser surgery. (Source: Strategic Rare Earth Metals Inc.) [[Neodymium]] doped optical materials are used frequently in the very common [[neodymium laser]]s.
*Artificially produced [[gemstone]]s (such as [[ruby|rubies]]) sometimes contain a dopant to identify them as such.
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[[Category:Semiconductors]]
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