Indium(III) antimonide 1762873 220374762 2008-06-19T15:34:39Z RJFJR 141808 /* Physics */ dab {{Chembox new | Name = Indium(III) antimonide | ImageFile = Indium(III) antimonide.jpg | ImageName = Indium(III) antimonide | OtherNames = Indium antimonide | Section1 = {{Chembox Identifiers | CASNo = 1312-41-0 }} | Section2 = {{Chembox Properties | Formula = InSb | MolarMass = 236.578 g/mol | Density = | Solvent = other solvents | SolubleOther = | MeltingPt = 527 °C<ref>[http://www.ioffe.rssi.ru/SVA/NSM/Semicond/InSb/thermal.html Thermal properties of Indium Antimonide (InSb)<!-- Bot generated title -->]</ref> | BoilingPt = }} | Section3 = {{Chembox Hazards | RPhrases = {{R20}} {{R22}} | SPhrases = {{S2}} {{S20/21}} {{S22}} {{S45}} }} }} '''Indium antimonide''' ({{Indium}}{{Antimony}}) is a [[narrow gap]] [[semiconductor material]] from the [[Boron group|III]]-[[Nitrogen Group|V]] group used in [[infrared detector]]s, including [[thermal imaging]] cameras, [[FLIR]] systems, [[infrared homing]] [[missile guidance]] systems, and in [[infrared astronomy]]. The indium antimonide detectors are sensitive between 1-5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Indium antimonide is a crystalline [[Chemical compound|compound]] made from the [[Chemical element|element]]s [[indium]] and [[antimony]]. It has the appearance of dark grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and [[antimony oxide]] vapors. Indium antimonide [[photodiode]] detectors are [[photovoltaic]], generating electric current when subjected to infrared radiation. InSb has high [[quantum efficiency]] (80-90%). Its drawback is a high instability over time; the detector characteristics tend to drift over time, and between cooldowns, requiring periodic recalibrations, increasing the complexity of the imaging system. Due to their instability, InSb detectors are rarely used in [[metrology]] applications. This added complexity is worthwhile where extreme sensitivity is required, e.g. in long-range military thermal imaging systems. [http://www.maintenanceresources.com/ReferenceLibrary/InfraredThermography/infraredglossary.htm] InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K). However, large arrays (up to 1024x1024 [[pixel]]s) are available. [http://www.ast.cam.ac.uk/~optics/tech/mgb_phd/chapter3.htm] [[HgCdTe]] and [[platinum silicide|PtSi]] are materials with similar use. A layer of indium antimonide sandwiched between layers of [[aluminium indium antimonide]] can act as a [[quantum well]]. This approach is studied in order to construct very fast [[transistor]]s. [http://www.newstarget.com/004842.html],[http://www.newscientist.com/article.ns?id=dn6997] [[Bipolar transistor]]s operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s. [[Field effect transistors]] operating at over 200 GHz have been reported more recently ([[Intel]]/[[QinetiQ]]). Some models suggest [[terahertz]] frequencies are achievable with this material. Indium antimonide semiconductors are also capable of operating with voltages under 0.5 V, reducing their power requirements. [http://www.qinetiq.com/home/case_studies/information_communication_and_electronics/microelectronics_-.html] ==History== InSb crystals have been grown by slow cooling from liquid melt at least since [[1954]]. ==Physics== It is a narrow gap [[semiconductor]] with an energy [[band gap]] equal to 0.17&nbsp;[[eV]] at 300&nbsp;[[Kelvin|K]] and 0.23&nbsp;eV at 80&nbsp;K. The [[crystal structure]] is [[zincblende]] with a 0.648&nbsp;[[metre|nm]] [[lattice constant]]. The undoped semiconductor possesses the largest ambient temperature [[electron mobility]] (7.8&nbsp;m<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>), [[electron velocity]], and [[Ballistic transport|ballistic length]] (up to 0.7&nbsp;μm at 300&nbsp;K) of any known semiconductor except possibly for [[carbon nanotubes]]. [[Alloy]]s which have been studied include [[aluminium indium antimodide|AlInSb]], [[indium gallium antimodide|InGaSb]], and [[indium arsenide antimodide|InAsSb]]. ==Growth Methods== InSb can be grown by solidifying a melt from the [[liquid]] state, or [[epitaxy|epitaxially]] by [[liquid phase epitaxy]], [[hot wall epitaxy]] or [[molecular beam epitaxy]]. It can also be grown from [[organometallic]] compounds by [[Metalorganic vapour phase epitaxy|MOVPE]]. ==Device Applications== * [[thermal imager]] detectors using [[photodiode]]s or [[photoelectromagnetic]] detectors * [[magnetic sensors]] using [[magnetoresistance]] or the [[Hall effect]] * fast [[transistor]]s ==References== {{Citationstyle|date=September 2007}} <references/> * Optical and Photo-Electrical Properties of Indium Antimonide, D. G. Avery, D. W. Goodwin, W. D. Lawson and T. S. Moss, [[Proceedings of the Physical Society|Proc. Phys. Soc.]] B 67 761-767 (1954) [http://www.iop.org/EJ/abstract/0370-1301/67/10/304] {{doi|10.1088/0370-1301/67/10/304}} * New infra-red detectors using indium antimonide, D. G. Avery, D. W. Goodwin, and Miss A. E. Rennie, Journal of Scientific Instruments, Vol. 34, Iss. 10, pp. 394-395 (1957). [http://www.iop.org/EJ/abstract/0950-7671/34/10/305] {{doi|10.1088/0950-7671/34/10/305}} ==External links== * [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/InSb/ Ioffe Institute semiconductor properties.] * [http://www.onr.navy.mil/sci_tech/information/312_electronics/ncsr/materials/insb.asp National Compound Semiconductor Roadmap] at the [[Office of Naval Research]] * [http://www.utdallas.edu/research/cleanroom/safety/msds/documents/Indium_Antimonide.pdf MSDS at University of texas at Dallas] [[Category:Antimonides]] [[Category:Indium compounds]] [[Category:Semiconductor materials]] [[Category:Infrared sensor materials]] [[Category:III-V compounds]] [[de:Indiumantimonid]] [[it:Antimoniuro di indio]]