Semiconductor
27709
225604205
2008-07-14T14:48:11Z
ArchonMagnus
7448192
[[WP:UNDO|Undid]] revision 225604060 by [[Special:Contributions/87.249.79.62|87.249.79.62]] ([[User talk:87.249.79.62|talk]])
{{cleanup|date=June 2008}}
{{Citations missing|date=March 2008}}
A '''semiconductor''' is a [[solid]] material that has [[electrical conductivity]] in between that of a [[Electrical conductor|conductor]] and that of an [[electrical insulation|insulator]]; it can vary over that wide range either permanently or dynamically.<ref>{{GoldBookRef|title=semiconductor|file=S05591}}</ref>
Semiconductors are tremendously important in [[Electronics|electronic]] [[technology]]. [[Semiconductor device]]s, electronic components made of semiconductor materials, are essential in modern [[consumer electronics]], including [[computers]], [[mobile phone]]s, and [[digital audio player]]s. [[Silicon]] is used to create most semiconductors commercially, but dozens of other materials are used as well.
== Overview ==
Semiconductors are very similar to [[Electrical insulation|insulators]]. The two categories of solids differ primarily in that insulators have larger [[band gap]]s—[[Energy|energies]] that [[electron]]s must acquire to be free to move from atom to atom. In semiconductors at room temperature, just as in insulators, very few electrons gain enough thermal energy to leap the [[band gap]] from the [[valence band]] to the [[conduction band]], which is necessary for electrons to be available for electric current [[Electrical conduction|conduction]]. For this reason, pure semiconductors and insulators in the absence of applied electric fields, have roughly similar resistance. The smaller bandgaps of semiconductors, however, allow for other means besides [[temperature]] to control their electrical properties.
Semiconductors' [[intrinsic semiconductor|intrinsic]] electrical properties are often permanently modified by introducing impurities by a process known as [[doping (semiconductors)|doping]]. Usually, it is sufficient to approximate that each impurity atom adds one electron or one "hole" (a concept to be discussed later) that may flow freely. Upon the addition of a sufficiently large proportion of impurity dopants, semiconductors will conduct [[electricity]] nearly as well as [[metals]]. Depending on the kind of impurity, a doped region of semiconductor can have more electrons or holes, and is named [[N-type semiconductor|N-type]] or [[P-type semiconductor]] material, respectively. [[P-n junction|Junctions between regions of N- and P-type semiconductors]] create [[electric field]]s, which cause electrons and holes to be available to move away from them, and this effect is critical to semiconductor device operation. Also, a density difference in the amount of impurities produces a small electric field in the region which is used to accelerate non-equilibrium electrons or holes.
In addition to permanent modification through [[doping (semiconductors)|doping]], the resistance of semiconductors is normally modified dynamically by applying electric fields. The ability to control resistance/conductivity in regions of semiconductor material dynamically through the application of [[electric fields]] is the feature that makes semiconductors useful. It has led to the development of a broad range of semiconductor devices, like [[transistor]]s and [[diode]]s. Semiconductor devices that have dynamically controllable conductivity, such as transistors, are the building blocks of [[integrated circuits]] devices like the [[microprocessor]]. These "active" semiconductor devices (transistors) are combined with [[passive component]]s implemented from semiconductor material such as [[capacitor]]s and [[resistor]]s, to produce complete electronic circuits.
In most semiconductors, when electrons lose enough energy to fall from the conduction band to the valence band (the energy levels above and below the [[electronic band structure|band gap]]), they often emit [[light]]. This [[photoemission]] process underlies the [[light-emitting diode]] (LED) and the [[semiconductor laser]], both of which are very important commercially. Conversely, semiconductor absorption of light in [[photodetector]]s excites electrons to move from the valence band to the higher energy conduction band, thus facilitating detection of light and vary with its intensity. This is useful for [[fiber optics|fiber optic communications]], and providing the basis for [[energy]] from [[solar cell]]s.
Semiconductors may be elemental materials such as [[silicon]] and [[germanium]], or [[compound semiconductor]]s such as [[gallium arsenide]] and [[indium phosphide]], or alloys such as [[silicon germanium]] or [[aluminium gallium arsenide]].
==Band structure==
{{details|Electronic band structure}}
<gallery caption="atoms - crystal - vacuum" widths="120px" perrow="5">
Image:HAtomOrbitals.png| In a single H-atom an electron resides in well known orbits. Note that the orbits are called s,p,d in order of increasing circular current.
Image:CovalentBond.png| Putting two atoms together leads to [[delocalization|delocalized]] orbits across two atoms, a so called [[covalent bond]]. Due to Paulis principle in every state there is max one electron.
Image:Bändermodell-Potentialtöpfe.png| This can be continued with more atoms. Note: This picture unfortunately shows a metal.
Image:Benz4.png| Using 6 carbon atoms one can create molecular orbits which allow for circular current. Filling the states following Pauli's principle leads to zero net current. Current due to uneven filling needs an energy investment.
Image:Ressauts et terrasses.png| Proceeding in a regular fashion and create a crystal, which may after creation be cut into a tape and fused together at the ends allow for circular currents.
Image:Si-band-schematics.PNG| For this regular solid the band structure can be calculated or measured.
Image:Electronic_band_diagram.svg| Integrating over the k axis gives the bands of a semiconductor showing a full valence band and an empty conduction band. Generally stopping at the vacuum level is dumb, because some people want to calculate: [[photoemission]], [[inverse photoemission]], [[Semiconductor_detector#particle_detectors]]
]]
Image:Wave packet (no dispersion).gif| '''After''' the band structure is determined states can be combined to generate [[wave packet]]s. As this is analogous to wave packages in free space, the results are similar.
Image:Diffusion rayleigh et diffraction.png| An [[Bragg's law|alternative description]], which does not really appreciate the strong Coulomb interaction, shoots free electrons into the crystal and looks at the scattering.
Image:Semiconduttore intrinseco.png| A third [[Lewis structure|alternative description]] uses strongly localized unpaired electrons in chemical bonds, which looks almost like a [[Mott insulator]].
</gallery>
There are three popular ways to describe the electronic structure of a crystal. The first starts from single atoms. An atom has discrete energy levels.
When two atoms come close each energy level splits into an upper and a lower level, whereby they delocalize across the two atoms.
With more atoms the number of levels increases, and groups of levels form bands.
Semiconductors contain many bands. If there is a large distance between the highest occupied state and the lowest unoccupied space, then a gap will likely remain between occupied and unoccupied bands even after band formation.
A second way starts with free electrons [[wave]]s. When fading in an electrostatic potential due to the cores,
due to [[Bragg reflection]] some waves are reflected and cannot penetrate the bulk, that is a band gap opens.
In this description it is not clear, while the number of electrons fills up exactly all states below the gap.
A third description starts with two atoms. The split states form a [[covalent bond]]
where two electrons with spin up and spin down are mostly in between the two atoms.
Adding more atoms now is supposed not to lead to splitting, but to more bonds.
This is the way silicon is typically drawn. The band gap is now formed by lifting one electron from the lower electron level
into the upper level. This level is known to be anti-bonding, but bulk silicon has not been seen to lose atoms as easy as electrons are
wandering through it. Also this model is most unsuitable to explain how in graded hetero-junction the band gap can vary smoothly.
Like in other solids, the electrons in semiconductors can have energies only within certain bands (ie. ranges of levels of energy) between the energy of the ground state, corresponding to electrons tightly bound to the atomic nuclei of the material, and the free electron energy, which is the energy required for an electron to escape entirely from the material. The energy bands each correspond to a large number of discrete [[quantum state]]s of the electrons, and most of the states with low energy (closer to the nucleus) are full, up to a particular band called the ''[[valence band]]''. Semiconductors and insulators are distinguished from [[metals]] because the valence band in the semiconductor materials is very nearly full under usual operating conditions, thus causing more electrons to be available in the conduction band.
The ease with which electrons in a semiconductor can be excited from the valence band to the conduction band depends on the [[band gap]] between the bands, and it is the size of this energy bandgap that serves as an arbitrary dividing line (roughly 4 [[electronvolt|eV]]) between semiconductors and [[Electrical insulation|insulator]]s.
In the picture of covalent bonds, an electron moves by hopping to a neighboring bond. Because of the [[Pauli exclusion principle]] it has to be lifted into the higher anti-bonding state of that bond. In the picture of delocalized states, for example in one dimension that is in a wire, for every energy there is a state with electrons flowing in one direction and one state for the electrons flowing in the other. For a net current to flow some more states for one direction then for the other direction have to be occupied and for this energy is needed. For a metal this can be a very small energy in the semiconductor the next higher states lie above the band gap. Often this is stated as: full bands do not contribute to the [[electrical conductivity]]. However, as the temperature of a semiconductor rises above [[absolute zero]], there is more energy in the semiconductor to spend on lattice vibration and — more importantly for us — on lifting some electrons into an energy states of the ''conduction band'', which is the band immediately above the valence band. The current-carrying electrons in the conduction band are known as "free electrons", although they are often simply called "electrons" if context allows this usage to be clear.
Electrons excited to the conduction band also leave behind [[electron hole]]s, or unoccupied states in the valence band. Both the conduction band electrons and the valence band holes contribute to electrical conductivity. The holes themselves don't actually move, but a neighboring electron can move to fill the hole, leaving a hole at the place it has just come from, and in this way the holes appear to move, and the holes behave as if they were actual positively charged particles.
One [[covalent bond]] between neighboring atoms in the solid is ten times stronger than the binding of the single electron to the atom, so freeing the electron does not imply destruction of the crystal structure.
The notion of [[electron hole|holes]], which was introduced for semiconductors, can also be applied to [[metal]]s, where the [[Fermi level]] lies ''within'' the conduction band. With most metals the [[Hall effect]] reveals electrons to be the charge carriers, but some metals have a mostly filled conduction band, and the [[Hall effect]] reveals positive charge carriers, which are not the ion-cores, but holes. Contrast this to some [[electrical conductor|conductors]] like solutions of [[salt]]s, or plasma. In the case of a metal, only a small amount of energy is needed for the electrons to find other unoccupied states to move into, and hence for current to flow. Sometimes even in this case it may be said that a hole was left behind, to explain why the electron does not fall back to lower energies: It cannot find a hole. In the end in both materials electron-phonon scattering and defects are the dominant causes for [[Electrical resistance|resistance]].
[[Image:FD e mu.jpg|right|thumb|360px|Fermi-Dirac distribution. States with energy <math>\epsilon</math> below the Fermi energy, here <math>\mu</math>, have higher probability <math>n</math> to be occupied, and those above are less likely to be occupied. Smearing of the distribution increases with temperature.]]The energy distribution of the electrons determines which of the states are filled and which are empty. This distribution is described by [[Fermi-Dirac statistics]]. The distribution is characterized by the [[temperature]] of the electrons, and the ''[[Fermi energy]]'' or ''Fermi level''. Under absolute zero conditions the Fermi energy can be thought of as the energy up to which available electron states are occupied. At higher temperatures, the Fermi energy is the energy at which the probability of a state being occupied has fallen to 0.5.
The dependence of the electron energy distribution on temperature also explains why the conductivity of a semiconductor has a strong temperature dependency, as a semiconductor operating at lower temperatures will have fewer available free electrons and holes able to do the work.
===Energy–momentum dispersion===
In the preceding description an important fact is ignored for the sake of simplicity: the ''dispersion'' of the energy. The reason that the energies of the states are broadened into a band is that the energy depends on the value of the [[wave vector]], or ''k-vector'', of the electron. The k-vector, in quantum mechanics, is the representation of the [[momentum]] of a particle.
The dispersion relationship determines the [[effective mass]], <math>m^{*}</math>, of electrons or holes in the semiconductor, according to the formula:
:<math> m^{*} = \hbar^2 \cdot \left[ {{d^2 E(k)} \over {d k^2}} \right]^{-1} </math>
The effective mass is important as it affects many of the electrical properties of the semiconductor, such as the electron or hole [[electron mobility|mobility]], which in turn influences the ''[[diffusion coefficient|diffusivity]]'' of the charge carriers and the [[electrical conductivity]] of the semiconductor.
Typically the effective mass of electrons and holes are different. This affects the relative performance of ''p-channel'' and ''n-channel'' [[IGFET]]s, for example (Muller & Kamins 1986:427).
The top of the valence band and the bottom of the conduction band might not occur at that same value of k. Materials with this situation, such as [[silicon]] and [[germanium]], are known as ''[[indirect bandgap]]'' materials. Materials in which the band extrema are aligned in k, for example [[gallium arsenide]], are called ''[[direct bandgap]]'' semiconductors. Direct gap semiconductors are particularly important in [[optoelectronics]] because they are much more efficient as light emitters than indirect gap materials.
==Carrier generation and recombination==
{{details|Carrier generation and recombination}}
When [[ionizing radiation]] strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as [[carrier generation and recombination|''electron–hole pair generation'']]. Electron-hole pairs are constantly generated from [[thermal energy]] as well, in the absence of any external energy source.
Electron-hole pairs are also apt to recombine. [[Conservation of energy]] demands that these recombination events, in which an electron loses an amount of [[energy]] larger than the [[band gap]], be accompanied by the emission of thermal energy (in the form of [[phonons]]) or radiation (in the form of [[photons]]).
In the steady state, the generation and recombination of electron–hole pairs are in equipoise. The number of electron-hole pairs in the [[steady state]] at a given temperature is determined by [[quantum statistical mechanics]]. The precise [[quantum mechanics|quantum mechanical]] mechanisms of generation and recombination are governed by [[conservation of energy]] and [[conservation of momentum]].
As the probability that electrons and holes meet together is proportional to the product of their amounts, the product is in steady state nearly constant at a given temperature, providing that there is no significant electric field (which might "flush" carriers of both types, or move them from neighbour regions containing more of them to meet together) or externally driven pair generation. The product is a function of the temperature, as the probability of getting enough thermal energy to produce a pair increases with temperature, being approximately 1/exp(band gap / kT), where k is [[Boltzmann's constant]] and T is absolute temperature.
The probability of meeting is increased by carrier traps – impurities or dislocations which can trap an electron or hole and hold it until a pair is completed. Such carrier traps are sometimes purposely added to reduce the time needed to reach the steady state.
== Doping ==
{{details|Doping (semiconductor)}}
The property of semiconductors that makes them most useful for constructing electronic devices is that their conductivity may easily be modified by introducing impurities into their [[crystal lattice]]. The process of adding controlled impurities to a semiconductor is known as ''doping''. The amount of impurity, or dopant, added to an ''[[intrinsic semiconductor|intrinsic]]'' (pure) semiconductor varies its level of conductivity. Doped semiconductors are often referred to as [[Extrinsic semiconductor|''extrinsic'']].
===Dopants===
The materials chosen as suitable dopants depend on the atomic properties of both the dopant and the material to be doped. In general, dopants that produce the desired controlled changes are classified as either electron acceptors or donors. A donor atom that activates (that is, becomes incorporated into the crystal lattice) donates weakly-bound valence electrons to the material, creating excess negative [[charge carrier]]s. These weakly-bound electrons can move about in the crystal lattice relatively freely and can facilitate conduction in the presence of an electric field. (The donor atoms introduce some states under, but very close to the conduction band edge. Electrons at these states can be easily excited to conduction band, becoming free electrons, at room temperature.) Conversely, an activated acceptor produces a hole. Semiconductors doped with donor impurities are called ''n-type'', while those doped with acceptor impurities are known as ''p-type''. The n and p type designations indicate which charge carrier acts as the material's [[majority carrier]]. The opposite carrier is called the [[minority carrier]], which exists due to thermal excitation at a much lower concentration compared to the majority carrier.
For example, the pure semiconductor [[silicon]] has four valence electrons. In silicon, the most common dopants are [[IUPAC]] [[Boron group|group 13]] (commonly known as ''group III'') and [[Nitrogen group|group 15]] (commonly known as ''group V'') elements. Group 13 elements all contain three valence electrons, causing them to function as acceptors when used to dope silicon. Group 15 elements have five valence electrons, which allows them to act as a donor. Therefore, a silicon crystal doped with [[boron]] creates a p-type semiconductor whereas one doped with [[phosphorus]] results in an n-type material.
===Carrier concentration===
The concentration of dopant introduced to an intrinsic semiconductor determines its concentration and indirectly affects many of its electrical properties. The most important factor that doping directly affects is the material's carrier concentration. In an intrinsic semiconductor under thermal equilibrium, the concentration of electrons and holes is equivalent. That is,
:<math>n = p = n_i</math>
Where <math>n</math> is the concentration of conducting electrons, <math>p</math> is the electron hole concentration, and <math>n_i</math> is the material's intrinsic carrier concentration. Intrinsic carrier concentration varies between materials and is dependent on temperature. Silicon's <math>n_i</math>, for example, is roughly 1.6×10<sup>10</sup> cm<sup>-3</sup> at 300 [[kelvin]] (room temperature).
In general, an increase in doping concentration affords an increase in conductivity due to the higher concentration of carriers available for conduction. Degenerately (very highly) doped semiconductors have conductivity levels comparable to metals and are often used in modern [[integrated circuit]]s as a replacement for metal. Often superscript plus and minus symbols are used to denote relative doping concentration in semiconductors. For example, <math>n^+</math> denotes an n-type semiconductor with a high, often degenerate, doping concentration. Similarly, <math>p^-</math> would indicate a very lightly doped p-type material. It is useful to note that even degenerate levels of doping imply low concentrations of impurities with respect to the base semiconductor. In crystalline intrinsic silicon, there are approximately 5×10<sup>22</sup> atoms/cm³. Doping concentration for silicon semiconductors may range anywhere from 10<sup>13</sup> cm<sup>-3</sup> to 10<sup>18</sup> cm<sup>-3</sup>. Doping concentration above about 10<sup>18</sup> cm<sup>-3</sup> is considered degenerate at room temperature. Degenerately doped silicon contains a proportion of impurity to silicon in the order of parts per thousand. This proportion may be reduced to parts per billion in very lightly doped silicon. Typical concentration values fall somewhere in this range and are tailored to produce the desired properties in the device that the semiconductor is intended for.
===Effect on band structure===
[[Image:Pn junction equilibrium.svg|thumb|right|[[Band diagram]] of a ''p<sup>+</sup>n'' junction. The band bending is a result of the positioning of the Fermi levels in the ''p<sup>+</sup>'' and ''n'' sides.]]
Doping a semiconductor crystal introduces allowed energy states within the band gap but very close to the energy band that corresponds with the dopant type. In other words, donor impurities create states near the conduction band while acceptors create states near the valence band. The gap between these energy states and the nearest energy band is usually referred to as dopant-site bonding energy or <math>E_B</math> and is relatively small. For example, the <math>E_B</math> for [[boron]] in silicon bulk is 0.045 eV, compared with silicon's band gap of about 1.12 eV. Because <math>E_B</math> is so small, it takes little energy to ionize the dopant atoms and create free carriers in the conduction or valence bands. Usually the thermal energy available at room temperature is sufficient to ionize most of the dopant.
Dopants also have the important effect of shifting the material's Fermi level towards the energy band that corresponds with the dopant with the greatest concentration. Since the Fermi level must remain constant in a system in [[thermodynamic equilibrium]], stacking layers of materials with different properties leads to many useful electrical properties. For example, the [[p-n junction]]'s properties are due to the energy band bending that happens as a result of lining up the Fermi levels in contacting regions of p-type and n-type material.
This effect is shown in a ''[[band diagram]]''. The band diagram typically indicates the variation in the valence band and conduction band edges versus some spatial dimension, often denoted ''x''. The Fermi energy is also usually indicated in the diagram. Sometimes the ''intrinsic Fermi energy'', ''E<sub>i</sub>'', which is the Fermi level in the absence of doping, is shown. These diagrams are useful in explaining the operation of many kinds of [[semiconductor device]]s.
==Preparation of semiconductor materials==
Semiconductors with predictable, reliable electronic properties are necessary for [[mass production]]. The level of chemical purity needed is extremely high because the presence of impurities even in very small proportions can have large effects on the properties of the material. A high degree of crystalline perfection is also required, since faults in crystal structure (such as [[dislocation]]s, [[Crystal twinning|twins]], and [[Crystallographic defect#Planar defects|stacking faults]]) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal [[ingots]] between four and twelve inches (300 mm) in diameter which are grown as cylinders and sliced into [[Wafer (electronics)|wafer]]s.
Because of the required level of chemical purity and the perfection of the crystal structure which are needed to make semiconductor devices, special methods have been developed to produce the initial semiconductor material. A technique for achieving high purity includes growing the crystal using the [[Czochralski process]]. An additional step that can be used to further increase purity is known as [[zone refining]]. In zone refining, part of a solid crystal is melted. The impurities tend to concentrate in the melted region, while the desired material recrystalizes leaving the solid material more pure and with fewer crystalline faults.
In manufacturing semiconductor devices involving [[heterojunction]]s between different semiconductor materials, the [[lattice constant]], which is the length of the repeating element of the crystal structure, is important for determining the compatibility of materials.
==See also==
{{portalpar|Electronics|Nuvola_apps_ksim.png}}
<div style="-moz-column-count:3; column-count:3;">
*[[Effective mass]]
*[[Electronic band structure]]
*[[Bloch waves]]
*[[Tight-binding model]]
*[[Electron mobility]]
*[[Exciton]]
*[[Semiconductor device fabrication]]
*[[List of semiconductor materials]]
*[[Semiconductor industry]]
*[[Quantum tunneling]]
*[[Semiconductor device]]
*[[Solid-state chemistry]]
*[[Spintronics]]
*[[Wide bandgap semiconductors]]
</div>
==References==
<div class="references-small">
<!--See http://en.wikipedia.org/wiki/Wikipedia:Footnotes for an explanation of how to generate footnotes using the <ref(erences/)> tags-->
<references/>
</div>
*{{cite book|last=Muller|first=Richard S.|coauthors=Theodore I. Kamins|title=Device Electronics for Integrated Circuits |edition= 2d|year= 1986|publisher= Wiley|location= New York|id= ISBN 0-471-88758-7}}
*{{cite book | author=[[Simon Sze|Sze, Simon M.]] | title=Physics of Semiconductor Devices (2nd ed.) | publisher=John Wiley and Sons (WIE) | year=1981| id=ISBN 0-471-05661-8}}
*{{cite book | author=Turley, Jim | title=The Essential Guide to Semiconductors | publisher=Prentice Hall PTR | year=2002 | id=ISBN 0-13-046404-X}}
*{{cite book | author=Yu, Peter Y.; Cardona, Manuel | title=Fundamentals of Semiconductors : Physics and Materials Properties | publisher=Springer | year=2004 | id=ISBN 3-540-41323-5}}
== External links ==
* [http://www.computerhistory.org/semiconductor/welcome.html Computer History Museum - The Silicon Engine - A Timeline of Semiconductors in Computers]
* iLocus Report on Communications Chip[http://www.ilocus.com/commchip1q07.htm] Communications Chip Market
* [http://www.newark.com/semiconductors-prototyping Newark - Source for Semiconductors and Prototyping ]
* [http://science.howstuffworks.com/diode.htm Howstuffworks' semiconductor page]
* [http://hyperphysics.phy-astr.gsu.edu/hbase/solids/semcn.html Semiconductor Concepts at Hyperphysics]
* Semiconductor OneSource [http://www.semi1source.com/shof/ Hall of Fame], [http://www.semiconductorglossary.com/ Glossary]
* [http://ece-www.colorado.edu/~bart/book/book/ Principles of Semiconductor Devices] by Bart Van Zeghbroeck, [[University of Colorado at Boulder|University of Colorado]]. An online textbook
* [http://www.tpub.com/content/neets/14179/index.htm US Navy Electrical Engineering Training Series]
* [http://www.iop.org/EJ/journal/SST Institute of Physics "Semiconductor Science and Technology" Journal]
* [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html NSM-Archive] Physical Properties of Semiconductors
{{Physics-footer}}
[[Category:Semiconductors| ]]
[[Category:Fundamental physics concepts]]
[[af:Halfgeleier]]
[[ar:شبه موصل]]
[[az:Yarımkeçiricilər]]
[[bn:অর্ধপরিবাহী]]
[[bs:Poluprovodnik]]
[[bg:Полупроводник]]
[[ca:Semiconductor]]
[[cs:Polovodič]]
[[da:Halvleder]]
[[de:Halbleiter]]
[[et:Pooljuht]]
[[el:Ημιαγωγός]]
[[es:Semiconductor]]
[[eo:Duonkonduktaĵo]]
[[fa:نیمهرسانا]]
[[fr:Semi-conducteur]]
[[ko:반도체]]
[[hr:Poluvodič]]
[[id:Semikonduktor]]
[[is:Hálfleiðari]]
[[it:Semiconduttore]]
[[he:מוליך למחצה]]
[[la:Semiconductrum]]
[[lv:Pusvadītājs]]
[[lt:Puslaidininkis]]
[[hu:Félvezető]]
[[ml:അര്ദ്ധചാലകം]]
[[ms:Separa pengalir]]
[[nl:Halfgeleider]]
[[ja:半導体]]
[[no:Halvleder]]
[[uz:Yarimoʻtkazgich]]
[[pl:Półprzewodniki]]
[[pt:Semicondutor]]
[[ru:Полупроводник]]
[[stq:Hoolichlaitere]]
[[sq:Gjysmëpërcjellësi]]
[[simple:Semiconductor]]
[[sk:Polovodič]]
[[sl:Polprevodnik]]
[[sr:Полупроводник]]
[[sh:Poluprovodnik]]
[[fi:Puolijohde]]
[[sv:Halvledare]]
[[ta:குறைமின்கடத்தி]]
[[th:สารกึ่งตัวนำ]]
[[vi:Chất bán dẫn]]
[[tr:Yarı iletken]]
[[uk:Напівпровідник]]
[[zh:半导体]]