Strained silicon 2403235 201124979 2008-03-26T19:28:10Z Dh2sbt 2067439 Typograohic corrections, links added '''Strained silicon''' is a layer of [[silicon]] in which the silicon [[atom]]s are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a [[Wafer (electronics)|substrate]] of [[silicon germanium]] ({{Silicon}}{{Germanium}}). As the atoms in the silicon layer align with the atoms in the silicon germanium layer where the atoms are farther apart, the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better [[Electron mobility|mobility]], resulting in better chip performance and lower energy consumption. These [[electron]]s can move 70% faster allowing strained silicon [[transistor]]s to switch 35% faster. More recent advances include deposition of strained silicon using [[Organometallic chemistry|metalorganic]] vapor phase epitaxy ([[MOVPE]]) with [[metalorganics]] as starting sources, e.g. silicon sources ([[silane]] and dichlorosilane) and germanium sources ([[Germane|germane]], [[germanium tetrachloride]], and [[isobutylgermane]]). ==External links== * [http://www.onr.navy.mil/sci_tech/31/312/ncsr/glossary.asp#S A brief description of strained silicon technology from National Compound Semiconductor Roadmap] * [http://www.amberwave.com/tech_silicon.html A corporate website's short description of this technology] * [http://www.research.ibm.com/resources/press/strainedsilicon/ descriptive images from IBM] * [http://www.technologyreview.com/read_article.aspx?id=17237&ch=infotech&sc=&pg=1 High-Performance Flexible Silicon] - A new way to make bendable high-speed strained silicon. * [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4HNSJS8-X&_user=10&_handle=V-WA-A-W-AUY-MsSWYWW-UUA-U-AAZBCYVDBE-AAZAAZCCBE-WUWZDAWZE-AUY-U&_fmt=summary&_coverDate=01%2F25%2F2006&_rdoc=103&_orig=browse&_srch=%23toc%235302%232006%23997129997%23614855!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films]; Presentation at ACCGE-16, Montana, USA, July 11, 2005; Shenai-Khatkhate et al, Journal of Crystal Growth, January 25, 2006. * [http://www.reed-electronics.com/semiconductor/article/CA6319057?industryid=3102 Ge Precursors for Strained Si and Compound Semiconductors]; ''Semiconductor International''; April 1, 2006. * [http://www.compoundsemi.com/documents/view/news.php3?id=5899 Rohm and Haas Electronic Materials Devises Germanium Film Growth Process]; ''CompoundSemi News'', September 23, 2005. * [http://www.three-fives.com/equipment_materials_news/Sept05_mats_news/230905Rohm&Haas_Hi_purity_Ge_film.htm High Purity Germanium Film]; ''III-Vs Review'', September 23, 2005. * [http://ecsmeet2.peerx-press.org/ms_files/ecsmeet2/2006/03/13/00040125/00/40125_0_art_file_1_1142292562.pdf Development of New Germanium Precursors for SiGe Epitaxy]; Presentation at 210th ECS Meeting (SiGe Symposium), Cancun, Mexico, October 29, 2006. * [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4MS9K7M-1&_user=10&_coverDate=01%2F31%2F2007&_alid=571098462&_rdoc=1&_fmt=summary&_orig=search&_cdi=5302&_sort=d&_docanchor=&view=c&_ct=12&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=393a7a045ea6a5beee881039c2cf98e5 Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE]; ''Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette and Egbert Woelk''; Journal of Crystal Growth, Volume 298, Pages 172-175, January 7, 2007. [[Category:Silicon]] [[Category:Semiconductor materials|Silicon, Strained]] [[Category:Germanium compounds]] [[Category:Semiconductors]] {{chem-stub}} [[de:Gestrecktes Silicium]]